dated : 07/01/ 2008 semtech electronics ltd. ( subsidiary of sino-tech internatio nal holdings limited, a company listed on the hong kong stock exchange, stock code: 724 ) ? BC516 pnp silicon darlington transistor absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage -v cbo 40 v collector emitter voltage -v ceo 30 v emitter base voltage -v ebo 10 v collector current (dc) -i c 500 ma peak collector current -i cm 800 ma total power dissipation p tot 500 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at -v ce = 2 v, -i c = 20 ma h fe 30000 - - collector base cutoff current at -v cb = 30 v -i cbo - 100 na emitter base cutoff current at -v eb = 10 v -i ebo - 100 na collector base breakdown voltage at -i c = 100 a -v (br)cbo 40 - v collector emitter breakdown voltage at -i c = 1 ma -v (br)ceo 30 - v emitter base breakdown voltage at -i e = 10 a -v (br)ebo 10 - v collector emitter saturation voltage at -i c = 100 ma, -i b = 0.1 ma -v ce(sat) - 1 v base emitter saturation voltage at -i c = 100 ma, -i b = 0.1 ma -v be(sat) - 1.5 v base emitter on voltage at -v ce = 5 v, -i c = 10 m a -v be(on) - 1.4 v transition frequency at -v ce = 5 v, -i c = 10 ma f t 125 - mhz 1. collector 2. base 3. emitter to-92 plastic package emitter collector base
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